D1007UK fet equivalent, metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* USEFUL PO at 1 GHz
* LOW NOISE
* HIGH GAIN
– 13 .
* LOW Crss
* USEFUL PO at 1 GHz
* LOW NOISE
* HIGH GAIN
– 13 dB MINIMUM
APPLICATIONS
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